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1 article(s) from Long, Brenda

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

Noel Kennedy,
Ray Duffy,
Luke Eaton,
Dan O’Connell,
Scott Monaghan,
Shane Garvey,
James Connolly,
Chris Hatem,
Justin D. Holmes and
Brenda Long

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

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Figure 1: Schematic depicting MLD processing applied to silicon on insulator wafers. It shows monolayer forma...

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Figure 2: Electrochemical capacitance–voltage profile showing the impact of applying a SiO₂ capping layer for...

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Figure 3: AFM images of (a) as received SOI (b) SOI after MLD processing.

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Figure 4: ECV plot of active carrier concentrations in a 66 nm SOI after MLD using a 50 nm sputtered SiO₂ cap...

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Figure 5: ECV plot of active carrier concentrations using bulk silicon samples to analyse the variation of th...

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Figure 6: X-ray photoelectron spectroscopy (XPS) study showing that there is a degree of surface oxidation af...

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Figure 7: Secondary ion mass spectrometry analysis of a P-MLD-doped 66 nm silicon on insulator substrate. Blu...

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Published 06 Aug 2018

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